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| 005 | 20220221131511.0 | ||
| 008 | 021024s2001 nyua b 000 0 eng | ||
| 020 | _a0471358274 (encuadernado en tela : papel alcalino) | ||
| 035 | _aMX001000934496 | ||
| 040 |
_aDLC _cDLC _dDLC |
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| 041 | _aENG | ||
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_aQC611 _bP75 |
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_a537.6/226 _221 |
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_aProperties of advanced semiconductor materials : _bGaN, AlN, InN, BN, SiC, SiGe / _cedited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur |
| 264 | 1 |
_aNew York : _bWiley, _c2001 |
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| 300 |
_axvii, 194 páginas : _bilustraciones ; |
||
| 650 | 0 |
_aSemiconductores _xMateriales |
|
| 700 | 1 |
_aLevinshtein, M. E. _q(Mikhail Efimovich), _eeditor |
|
| 700 | 1 |
_aRumyantsev, Sergey L., _eeditor |
|
| 700 | 1 |
_aShur, Michael, _eeditor |
|
| 336 |
_atexto _2rdacontent |
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| 337 |
_asin medio _2rdamedia |
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| 338 |
_avolumen _2rdacarrier |
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| 999 |
_c14212 _d14212 |
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